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| MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com * Pb-Free Packages are Available MAXIMUM RATINGS (TA = 25C) Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Value -30 -50 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc Adc A 30 VOLTS, 2.0 AMPS PNP TRANSISTORS COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Total Device Dissipation (Ref. Figure 8) (Single Pulse < 10 sec.) Junction and Storage Temperature Symbol PD 310 2.5 RqJA PD 710 5.7 RqJA PDsingle 575 TJ, Tstg -55 to +150 mW C 176 mW mW/C C/W 403 mW mW/C C/W Max Unit 3 SOT-23 (TO-236) CASE 318 STYLE 6 1 2 MARKING DIAGRAM G3 M G G 1 G3 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad ORDERING INFORMATION Device MMBT589LT1 MMBT589LT1G Package SOT-23 Shipping 3,000 / Tape & Reel SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 January, 2007 - Rev. 4 Publication Order Number: MMBT589LT1/D MMBT589LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -30 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 3) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) Base -Emitter Saturation Voltage (Note 3) (Figure 2) (IC = -1.0 A, IB = -0.1 A) Base -Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 80 40 VCE(sat) - - - VBE(sat) VBE(on) fT Cobo - - 100 - -0.25 -0.30 -0.65 -1.2 -1.1 - 15 V V MHz pF - 300 - - V - V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO -30 -50 -5.0 - - - - - - -0.1 -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc mAdc Symbol Min Max Unit http://onsemi.com 2 MMBT589LT1 200 VCE = -2.0 V h FE , DC CURRENT GAIN 150 230 210 h FE , DC CURRENT GAIN 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 50 1.0 10 -55C 25C 125C VCE = -1.0 V 100 50 100 1000 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Figure 2. DC Current Gain versus Collector Current IC/IB = 10 IC/IB = 100 1000 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 3. "On" Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100 1000 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 MMBT589LT1 10 IC , COLLECTOR CURRENT (AMPS) SINGLE PULSE TEST AT Tamb = 25C 1s 100 ms 10 ms 1 ms 100 ms 1.0 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response http://onsemi.com 4 MMBT589LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MMBT589LT1/D |
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